features glas s passi vated chip junct ions low forw ard voltage drop, high curr ent capability surge overloa d rating to 50a peak absolute maxim um ratings ta = 25 parameter sym bol df150 05s df150 1s df150 2s df150 4s df150 6s df150 8s df151 0s unit peak repetitive reve rse volt age w orking peak reverse voltage dc blocki ng voltage v rmm v rw m v dc 50 100 200 400 600 800 1000 v rm s rever se v oltage v rms 35 70 140 280 420 560 700 v avera ge forw ard re cti fied curre nt t a =@ 40 i o a non- repe titi ve peak forw ard surge curre nt, 8. 3 m s single half-sine-w ave superim posed on rated lo ad (jedecm ethod) i fsm a forw ard voltage (pe r element) @ i f = 1.5a v f v rev erse curr ent(per elem ent) @ rated v r , t a = 25 t a = 125 i r a rating for fusing (t < 8.3m s) i 2 t a 2 s typical total capacitance (per elem ent) (note 1) c j pf typical thermal resistanc e, j unction to am bient (note 2) r ja /w opera ting and storage temperature ran ge t j , t stg notes: 1. measur ed at 1.0 mhz and applied rev erse voltage of 4. 0v dc. 2.device m ounted on pcb w ith 0.5 0.5 (13 13mm ). 40 -55 to +150 1.5 50 1.1 10 500 25 10 df-s 0.255 (6.5) 0.245 (6.2) 0.013 (0.330) 0.009 (0.241) 0.060 (1.524) 0.040 (1.016) 0.404 (10.3) 0.013 (0.330) 0.003 (0.076) 0.047 (1.20) 0.040 (1.02) 0.205 (5.2) 0.195 (5.0) 0.335 (8.51) 0.320 (8.13) 0.130 (3.3) 0.120 (3.05) 45 o 0.386 (9.80) dimensions in inches and (millimeters) 1 of 2 sales@twtysemi.com http://www.twtysemi.com df150 05s - df151 0s product specification 4008-318-123
typical characteristics df150 05s - df151 0s 0.01 0.1 1.0 10 0.4 0.6 0.8 1.0 1.2 1.4 i , instantaneous for ward current (a) f v , instantaneous forward voltage (v) fi g .2 t y p forward characteristics ( per element ) f t = 25c pulse width = 300s 2% duty cycle j 0 10 20 30 40 50 60 1 10 100 i , peak for ward surge current (a) fsm number of cycles at 60 hz fi g . 3 max non-repetitive peak forward sur g e current single half-sine-wave (jedec method) 1 10 100 1 10 100 c , capacitance (pf) j v , reverse voltage (v) fi g .4 t y p junction capacitance ( per element ) r t = 25c f = 1.0 mhz v = 50 mv p-p j sig 0.01 0.1 1.0 10 100 20 04060 80 100 120 140 i , instantaneous reverse current (a) r percent of rated peak reverse voltage (%) fi g .5 t y p reverse characteristics ( per element ) t = 125c j t = 25c j 1.0 0.5 0 40 60 80 100 120 140 i , average for ward current (a) o t , ambient temperature (c) fi g . 1 output current deratin g curve a 60 hz resistive or inductive load 1.5 2 . 0 2 of 2 sales@twtysemi.com http://www.twtysemi.com product specification 4008-318-123
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